Charge-collection dynamics of InP-based high electron mobility transistors (HEMTs)

Author

McMorrow, Dale ; Boos, J. Brad ; Park, Doe ; Buchner, Stephen ; Knudson, Alvin R. ; Melinger, Joseph S.

Author_Institution

Naval Res. Lab., Washington, DC, USA

Volume

49

Issue

3

fYear

2002

fDate

6/1/2002 12:00:00 AM

Firstpage

1396

Lastpage

1400

Abstract

Time-resolved charge-collection measurements are performed on InAlAs/InGaAs HEMTs with pulsed laser excitation as a function of device bias conditions and the incident laser pulse energy. The results provide clear evidence for the presence of charge-enhancement processes that, in many ways, are analogous to those observed previously for GaAs FET technology.

Keywords

HEMT integrated circuits; III-V semiconductors; carrier mobility; indium compounds; laser beam effects; nuclear electronics; FET technology; HEMT; InAlAs-InGaAs; charge-collection dynamics; charge-enhancement processes; device bias conditions; high electron mobility transistors; laser pulse energy; pulsed laser excitation; single-event effects; single-event upset; time-resolved charge-collection measurements; Current measurement; Energy measurement; HEMTs; Indium compounds; Indium gallium arsenide; Laser excitation; MODFETs; Optical pulses; Performance evaluation; Pulse measurements;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/TNS.2002.1039673

Filename

1039673