The Effect of Single-Halo Doping on the Low-Frequency Noise Performance of Deep Submicrometer MOSFETs

Author

Narasimhulu, K. ; Setty, I. Venkatasuryam ; Rao, V. Ramgopal

Author_Institution

Dept. of Electr. Eng., IIT Bombay, Mumbai

Volume

27

Issue

12

fYear

2006

Firstpage

995

Lastpage

997

Abstract

In this letter, the low-frequency noise performance of single-halo (SH) devices is reported, and the physical mechanisms are identified. Experimental results show that, at constant gate overdrive voltages, SH devices show reduced low-frequency noise levels compared to the conventional devices. However, under constant current bias conditions, the noise reduction is less substantial. Low-frequency noise dependence on channel length is also investigated for SH devices based on the electrical measurements and analytical calculations

Keywords

MOSFET; semiconductor device measurement; semiconductor device noise; semiconductor doping; channel length; constant current bias conditions; deep submicrometer MOSFET; electrical measurements; low-frequency noise; normalized drain-current noise spectral density; single-halo doping; CMOS technology; Doping profiles; Frequency; Implants; Length measurement; Low-frequency noise; MOSFETs; Noise reduction; Statistical distributions; Voltage; Low-frequency noise; normalized drain-current noise spectral density; single-halo (SH) devices;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2006.886409

Filename

4016197