Title :
The Effect of Single-Halo Doping on the Low-Frequency Noise Performance of Deep Submicrometer MOSFETs
Author :
Narasimhulu, K. ; Setty, I. Venkatasuryam ; Rao, V. Ramgopal
Author_Institution :
Dept. of Electr. Eng., IIT Bombay, Mumbai
Abstract :
In this letter, the low-frequency noise performance of single-halo (SH) devices is reported, and the physical mechanisms are identified. Experimental results show that, at constant gate overdrive voltages, SH devices show reduced low-frequency noise levels compared to the conventional devices. However, under constant current bias conditions, the noise reduction is less substantial. Low-frequency noise dependence on channel length is also investigated for SH devices based on the electrical measurements and analytical calculations
Keywords :
MOSFET; semiconductor device measurement; semiconductor device noise; semiconductor doping; channel length; constant current bias conditions; deep submicrometer MOSFET; electrical measurements; low-frequency noise; normalized drain-current noise spectral density; single-halo doping; CMOS technology; Doping profiles; Frequency; Implants; Length measurement; Low-frequency noise; MOSFETs; Noise reduction; Statistical distributions; Voltage; Low-frequency noise; normalized drain-current noise spectral density; single-halo (SH) devices;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.886409
