• DocumentCode
    837740
  • Title

    Analysis of the proton-induced permanent degradation in an optocoupler

  • Author

    Germanicus, R. ; Dusseau, L. ; Saigné, F. ; Barde, S. ; Ecoffet, R. ; Mion, O. ; Calvel, P. ; Fesquet, J. ; Gasiot, J.

  • Author_Institution
    Univ. Montpellier II, France
  • Volume
    49
  • Issue
    3
  • fYear
    2002
  • fDate
    6/1/2002 12:00:00 AM
  • Firstpage
    1421
  • Lastpage
    1425
  • Abstract
    We have studied the effect of proton irradiation with energies from 21 to 200 MeV on commercial optocouplers. The basic degradation mechanisms for such devices are reviewed. Our experimental results are described. Using the concept of displacement damage dose, we propose a new approach to analyze the results.
  • Keywords
    gamma-ray effects; opto-isolators; proton effects; 21 to 200 MeV; current transfer ratio; degradation mechanisms; displacement damage dose; gamma induced degradation; nonionizing energy loss; optocoupler; proton irradiation; proton-induced permanent degradation; Degradation; Energy loss; Light emitting diodes; Low earth orbit satellites; Optoelectronic devices; Phototransistors; Protons; Semiconductor devices; Silicon; Space missions;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/TNS.2002.1039677
  • Filename
    1039677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=837740