Title :
Analysis of the proton-induced permanent degradation in an optocoupler
Author :
Germanicus, R. ; Dusseau, L. ; Saigné, F. ; Barde, S. ; Ecoffet, R. ; Mion, O. ; Calvel, P. ; Fesquet, J. ; Gasiot, J.
Author_Institution :
Univ. Montpellier II, France
fDate :
6/1/2002 12:00:00 AM
Abstract :
We have studied the effect of proton irradiation with energies from 21 to 200 MeV on commercial optocouplers. The basic degradation mechanisms for such devices are reviewed. Our experimental results are described. Using the concept of displacement damage dose, we propose a new approach to analyze the results.
Keywords :
gamma-ray effects; opto-isolators; proton effects; 21 to 200 MeV; current transfer ratio; degradation mechanisms; displacement damage dose; gamma induced degradation; nonionizing energy loss; optocoupler; proton irradiation; proton-induced permanent degradation; Degradation; Energy loss; Light emitting diodes; Low earth orbit satellites; Optoelectronic devices; Phototransistors; Protons; Semiconductor devices; Silicon; Space missions;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039677
