DocumentCode :
837799
Title :
On Oxygen Deficiency and Fast Transient Charge-Trapping Effects in High- 
Dielectrics
Author :
Wen, Huang-Chun ; Harris, H. Rusty ; Young, Chadwin D. ; Luan, Hongfa ; Alshareef, Husam N. ; Choi, Kisik ; Kwong, Dim-Lee ; Majhi, Prashant ; Bersuker, Gennadi ; Lee, Byoung Hun
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Texas, Austin, TX
Volume :
27
Issue :
12
fYear :
2006
Firstpage :
984
Lastpage :
987
Abstract :
This letter correlates fast transient charging (FTC) in high-k gate dielectrics to variations in its oxygen content. Analysis of electrical and physical data suggests that the observed enhancement of FTC may be caused by reduction of the oxygen content in the high-k film due to O scavenging process induced by the HfSix metal electrode. A hypothesis correlating O scavenging from the high-k dielectric to O vacancy formation, which contributes to FTC, is proposed
Keywords :
carrier mobility; hafnium compounds; high-k dielectric thin films; HfSi; O scavenging; O vacancy formation; fast transient charge-trapping effects; fast transient charging; high-k gate dielectrics; metal electrode; mobility characteristics; oxygen content; oxygen deficiency; Annealing; CMOS technology; Degradation; Dielectric devices; Electrodes; Electron traps; Hafnium oxide; Oxygen; Threshold voltage; Tin; Charge trapping; O vacancy; high-$k$
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.886711
Filename :
4016206
Link To Document :
