Title :
Analysis of total dose tolerance of LOCOS isolated MOSFET by 2-D self-consistent simulations
Author :
Torres, A. ; Flament, O.
Author_Institution :
DAM Ile-de-France, CEA, Bruyeres-le-Chatel, France
fDate :
6/1/2002 12:00:00 AM
Abstract :
The total dose tolerance of parasitic LOCOS field transistors is analyzed using two-dimensional (2-D) self-consistent simulations. The influence of process parameters such as the substrate doping level is examined through both experimental and simulation results to improve the understanding of ionizing effects on isolation.
Keywords :
MOSFET; X-ray effects; isolation technology; leakage currents; oxidation; radiation hardening (electronics); semiconductor device models; 10 keV; 2-D self-consistent simulations; 5 to 20 krad; LOCOS isolated MOSFET; Si-SiO2; Si-SiO2 interface; X-ray irradiation; field oxidation; ionizing effects; isolation process sequence; numerical simulations; parasitic LOCOS field transistors; radiation hardening; radiation-induced leakage current; substrate doping level; total dose tolerance; Analytical models; Doping; Implants; Leakage current; MOSFET circuits; Numerical simulation; Oxidation; Scanning electron microscopy; Threshold voltage; Two dimensional displays;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039684
