DocumentCode
837841
Title
Contribution of GEANT4 to the determination of sensitive volumes in case of high-integrated RAMs
Author
Inguimbert, C. ; Duzellier, S. ; Ecoffet, R.
Author_Institution
ONERA-DESP, Toulouse, France
Volume
49
Issue
3
fYear
2002
fDate
6/1/2002 12:00:00 AM
Firstpage
1480
Lastpage
1485
Abstract
This paper deals with the use of short-range beams in order to measure the sensitive thickness of devices. In the case of a Hitachi 4-Mbit SRAM, σ(E) measurements have been compared to GEANT 4 calculations, taking into account the effects of the overlayers. The analysis of the experimental data at two bias levels has pointed out that σ(E) is directly correlated with the energy deposited in sensitive volume (SV) for low ranges, on the other hand charge collection mechanisms have a strong impact for long ranges.
Keywords
SRAM chips; ion beam effects; σ(E); 4 Mbit; GEANT 4; Hitachi SRAM; charge collection mechanisms; heavy ion penetration depth; overlayers; sensitive volumes; upset; Computer aided software engineering; Deconvolution; Extraterrestrial measurements; Orbital calculations; Probes; Process design; Random access memory; Single event upset; Thickness measurement; Volume measurement;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2002.1039687
Filename
1039687
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