Title :
Single-event sensitivity of a single SRAM cell
Author :
Darracq, F. ; Beauchêne, T. ; Pouget, V. ; Lapuyade, H. ; Lewis, D. ; Fouillat, P. ; Touboul, A.
Author_Institution :
Bordeaux I Univ., Talence, France
fDate :
6/1/2002 12:00:00 AM
Abstract :
A test vehicle has been specially realized to demonstrate that different physical mechanisms are responsible for single-event upset phenomena within an elementary memory cell, depending on the impact location. Validation is performed using pulsed laser equipment.
Keywords :
SRAM chips; measurement by laser beam; SRAM; laser mapping; pulsed laser; single-event sensitivity; single-event upset; Laser beams; Laser theory; MOSFETs; Optical pulses; Random access memory; Single event upset; Space technology; Spatial resolution; Testing; Vehicles;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2002.1039688
