A V-Band Three-State Phase Shifter in CMOS-MEMS Technology

Author

Chia-Chan Chang ; Ying-Chiuan Chen ; Sheng-Chi Hsieh

Author_Institution

Dept. of Electr. Eng., Nat. Chung-Cheng Univ., Chiayi, Taiwan

Volume

23

Issue

5

fYear

2013

fDate

May-13

Firstpage

264

Lastpage

266

Abstract

A V-band CMOS-MEMS switchable phase shifter based on reflection-type topology is presented in this work. The phase shifter is fabricated in 0.18-μm CMOS process with a chip size of 1.04 mm², wherein the suspended MEMS structure is released through the post-CMOS micromachining. Three discrete phase states, including 0°, 89°, 144° at 65 GHz, can be achieved by the bi-directional fishbone actuators under 46-V actuation voltage. The measured insertion loss is 2.2±1 dB and the return loss is better than 14 dB over the 55-65 GHz frequency range, demonstrating a great potential in many applications.

Keywords

CMOS integrated circuits; field effect MIMIC; microactuators; micromachining; millimetre wave phase shifters; CMOS-MEMS switchable phase shifter; bidirectional fishbone actuators; frequency 55 GHz to 65 GHz; insertion loss; post-CMOS micromachining; reflection-type topology; return loss; size 0.18 mum; suspended MEMS structure; three-state phase shifter; voltage 46 V; Actuator; CMOS-MEMS; phase shifter; reflection-type;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2013.2253309

Filename

6490067