• DocumentCode
    838326
  • Title

    Silicon-on-sapphire MOSFET model for analogue circuit simulation

  • Author

    Howes, R. ; Redman-White, W. ; Nichols, K.G. ; Murray, S.J. ; Mole, P.J.

  • Author_Institution
    Dept. of Electron. & Comput. Sci., Southampton Univ., UK
  • Volume
    139
  • Issue
    1
  • fYear
    1992
  • fDate
    2/1/1992 12:00:00 AM
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    A simple, physically based circuit simulation model for silicon-on-sapphire (SOS) MOSFETs is presented. The model has been implemented in SPICE and shows accurate prediction of the onset of the kink effect. Simulation results of amplifier circuits show significant improvement in predicting operating point and gain compared with bulk MOS models
  • Keywords
    MOS integrated circuits; circuit analysis computing; equivalent circuits; insulated gate field effect transistors; semiconductor device models; MOSFET model; SOS type; SPICE; Si-Al2O3; amplifier circuits; analogue circuit simulation; gain prediction; kink effect onset; operating point prediction;
  • fLanguage
    English
  • Journal_Title
    Circuits, Devices and Systems, IEE Proceedings G
  • Publisher
    iet
  • ISSN
    0956-3768
  • Type

    jour

  • Filename
    125114
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=838326