DocumentCode
838334
Title
Dynamics and Temperature-Dependence of 1.3-
GaInNAs Double Quantum-Well Lasers
Author
Wei, Yongqiang ; Gustavsson, Johan S. ; Sadeghi, Mahdad ; Wang, Shumin ; Larsson, Anders
Author_Institution
Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg
Volume
42
Issue
12
fYear
2006
Firstpage
1274
Lastpage
1280
Abstract
We have measured the small-signal modulation response of 1.3-mum ridge waveguide GaInNAs double quantum-well lasers over a wide range of temperatures (25 degC-110 degC) and analyzed the temperature dependence of the modulation bandwidth and the various bandwidth limiting effects. The lasers have low threshold currents and high differential efficiencies with small temperature dependencies. A short-cavity (350 mum) laser has a modulation bandwidth as high as 17 GHz at room temperature, reducing to 4 GHz at 110 degC, while a laser with a longer cavity (580 mum) maintains a bandwidth of 8.6 GHz at 110 degC. We find that at all ambient temperatures the maximum bandwidth is limited by thermal effects as the temperature increases with current due to self-heating. The reduction and subsequent saturation of the resonance frequency with increasing current is due to a reduction of the differential gain and an increase of the threshold current with increasing temperature. We find large values for the differential gain and the gain compression factor. The differential gain decreases linearly with temperature while there is only a weak temperature dependence of the gain compression. At the highest temperature we also find evidence for transport effects that increase the damping rate and reduce the intrinsic bandwidth
Keywords
III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; laser variables measurement; optical modulation; quantum well lasers; wide band gap semiconductors; 1.3 mum; 17 GHz; 25 to 110 degC; 350 mum; 4 GHz; 580 mum; 8.6 GHz; GaInNAs; GaInNAs double quantum-well lasers; differential efficiency; differential gain; gain compression factor; modulation bandwidth; ridge waveguide; self-heating; small-signal modulation; thermal effects; threshold currents; Bandwidth; Damping; Gain measurement; Quantum well lasers; Resonance; Resonant frequency; Temperature dependence; Temperature distribution; Threshold current; Waveguide lasers; GaInNAs; semiconductor laser; temperature dependence;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2006.884579
Filename
4016258
Link To Document