• DocumentCode
    838334
  • Title

    Dynamics and Temperature-Dependence of 1.3- \\mu{\\hbox {m}} GaInNAs Double Quantum-Well Lasers

  • Author

    Wei, Yongqiang ; Gustavsson, Johan S. ; Sadeghi, Mahdad ; Wang, Shumin ; Larsson, Anders

  • Author_Institution
    Dept. of Microtechnology & Nanoscience, Chalmers Univ. of Technol., Goteborg
  • Volume
    42
  • Issue
    12
  • fYear
    2006
  • Firstpage
    1274
  • Lastpage
    1280
  • Abstract
    We have measured the small-signal modulation response of 1.3-mum ridge waveguide GaInNAs double quantum-well lasers over a wide range of temperatures (25 degC-110 degC) and analyzed the temperature dependence of the modulation bandwidth and the various bandwidth limiting effects. The lasers have low threshold currents and high differential efficiencies with small temperature dependencies. A short-cavity (350 mum) laser has a modulation bandwidth as high as 17 GHz at room temperature, reducing to 4 GHz at 110 degC, while a laser with a longer cavity (580 mum) maintains a bandwidth of 8.6 GHz at 110 degC. We find that at all ambient temperatures the maximum bandwidth is limited by thermal effects as the temperature increases with current due to self-heating. The reduction and subsequent saturation of the resonance frequency with increasing current is due to a reduction of the differential gain and an increase of the threshold current with increasing temperature. We find large values for the differential gain and the gain compression factor. The differential gain decreases linearly with temperature while there is only a weak temperature dependence of the gain compression. At the highest temperature we also find evidence for transport effects that increase the damping rate and reduce the intrinsic bandwidth
  • Keywords
    III-V semiconductors; gallium compounds; indium compounds; laser cavity resonators; laser variables measurement; optical modulation; quantum well lasers; wide band gap semiconductors; 1.3 mum; 17 GHz; 25 to 110 degC; 350 mum; 4 GHz; 580 mum; 8.6 GHz; GaInNAs; GaInNAs double quantum-well lasers; differential efficiency; differential gain; gain compression factor; modulation bandwidth; ridge waveguide; self-heating; small-signal modulation; thermal effects; threshold currents; Bandwidth; Damping; Gain measurement; Quantum well lasers; Resonance; Resonant frequency; Temperature dependence; Temperature distribution; Threshold current; Waveguide lasers; GaInNAs; semiconductor laser; temperature dependence;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/JQE.2006.884579
  • Filename
    4016258