DocumentCode
838447
Title
Residual phase noise performance of X-band GaAs FET amplifiers at liquid nitrogen temperature
Author
Mitzan, M. ; McGowan, R.
Author_Institution
US Army LABCOM, Electron. Technol. & Devices Lab., Fort Monmouth, NJ, USA
Volume
139
Issue
1
fYear
1992
fDate
2/1/1992 12:00:00 AM
Firstpage
37
Lastpage
38
Abstract
High-performance X-band GaAs FET amplifiers were evaluated at room temperature and 77 K, to determine the residual phase noise of the amplifiers. The data revealed 15-50 dBc/Hz degradation in the close-in residual phase noise when the amplifiers were operated at 77 K
Keywords
III-V semiconductors; MMIC; cryogenics; electron device noise; field effect integrated circuits; gallium arsenide; microwave amplifiers; microwave integrated circuits; solid-state microwave circuits; 77 K; FET amplifiers; GaAs; MIC; MMIC; X-band; liquid nitrogen temperature; residual phase noise; room temperature;
fLanguage
English
Journal_Title
Circuits, Devices and Systems, IEE Proceedings G
Publisher
iet
ISSN
0956-3768
Type
jour
Filename
125115
Link To Document