Title :
A 150 kVA/0.3 MJ SMES voltage sag compensation system
Author :
Jiang, Xiaohua ; Zhu, Xiaoguang ; Cheng, Zhiguang ; Ren, Xiaopeng ; He, Yeye
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
fDate :
6/1/2005 12:00:00 AM
Abstract :
To protect a 110 kVA critical load from voltage sags, a demonstration SMES-based voltage sag compensator has been developed and tested. This system consists of a 150 kVA IGBT (Insulated Gate Bipolar Transistor) current source converter, a 0.3 MJ NbTi magnet and three phase-shift inductors. Experiments were carried out to test the compensation performances for both balanced and unbalanced voltage sags with a 110 kW load of resistance. The results show that the load voltage recovers in less than one cycle (20 ms) whenever a three-phase or single-phase voltage sag occurs.
Keywords :
convertors; inductors; insulated gate bipolar transistors; niobium compounds; superconducting magnet energy storage; voltage regulators; 110 kVA; 110 kW; IGBT current source converter; NbTi; NbTi magnet; critical load; insulated gate bipolar transistor; superconducting magnetic energy storage; three phase-shift inductors; voltage sag compensation; Inductors; Insulated gate bipolar transistors; Niobium compounds; Power quality; Protection; Samarium; Superconducting magnetic energy storage; Testing; Titanium compounds; Voltage fluctuations; IGBT current source converter; NbTi magnet; SMES; voltage sag compensation;
Journal_Title :
Applied Superconductivity, IEEE Transactions on
DOI :
10.1109/TASC.2005.849329
