Title :
12.4-Gb/s Adaptive OFDM Modulation of a Hybrid III/V-on-Silicon Laser Over 50-km SMF-Link
Author :
de Farias, G. Beninca ; Menezo, Sylvie ; Ben Bakir, B. ; Descos, A. ; Grellier, E.
Author_Institution :
CMOS Photonics Lab., CEA-Leti, Grenoble, France
Abstract :
This letter reports a cost-effective transmitter solution for future generations of long reach passive optical networks (PONs). It is based on the direct adaptive orthogonal frequency division multiplexing modulation of a hybrid III/V-on-silicon laser. Because of low-noise and good linearity of the hybrid laser, modulation formats as high as 32-quadrature amplitude modulation are achieved. Data-rates of 21.5 and 12.4 Gb/s are demonstrated, respectively, in optical back-to-back and 50 km single-mode fiber (SMF)-link free from amplifiers, while on-off keying transmission is limited to at 20 km SMF. The proposed solution stands as a cost-effective solution for next-generation time and wavelength division multiplexing PONs with extended reach, as the hybrid laser can further be made tunable.
Keywords :
III-V semiconductors; OFDM modulation; adaptive modulation; amplitude shift keying; elemental semiconductors; optical links; optical modulation; optical transmitters; passive optical networks; quadrature amplitude modulation; semiconductor lasers; silicon; wavelength division multiplexing; 32-quadrature amplitude modulation; PON; SMF-link; Si; adaptive OFDM modulation; amplifiers; bit rate 12.4 Gbit/s; bit rate 21.5 Gbit/s; cost-effective transmitter solution; direct adaptive orthogonal frequency division multiplexing modulation; distance 20 km; hybrid III-V-on-silicon laser; long reach passive optical networks; on-off keying transmission; optical back-to-back link; single-mode fiber link; wavelength division multiplexing; Measurement by laser beam; Modulation; OFDM; Optical network units; Signal to noise ratio; Silicon; Surface emitting lasers; Optical OFDM; QAM; bit and power loading; hybrid III–V/Si laser; silicon photonics;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2013.2278404