Level shifter embedded in drive circuits with amorphous silicon TFTs

Author

Bae, Byung Seong ; Choi, Jae Won ; Oh, Jae Hwan ; Jang, Jin

Author_Institution

Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea

Volume

53

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

494

Lastpage

498

Abstract

A drive circuit embedded with a level shifter was fabricated with conventional a-Si:H thin-film transistor (TFT) process. Two cascaded bootstrapped inverters were fabricated for the level shifter. The proposed level shifter shifts an input signal to a high voltage, for example, from 5 to 30 V. The level shifter embedded driver with a-Si:H TFT operates well for the input 5-V start pulse and clocks, and the 4th output of the driver shows 30.3-V output. The level shifter is stable under operation even though there is a threshold voltage shift of a-Si:H TFT. The stability of the driver was also investigated.

Keywords

amorphous semiconductors; bootstrap circuits; driver circuits; invertors; shift registers; thin film transistors; Si:H; amorphous semiconductors; amorphous silicon TFT; cascaded bootstrapped inverters; drive circuits; driver stability; level shifter; shift registers; thin-film transistors; Active matrix liquid crystal displays; Amorphous silicon; Capacitors; Clocks; Driver circuits; Inverters; Low voltage; Shift registers; Thin film transistors; Threshold voltage; Amorphous semiconductors; integrated circuits; shift registers; thin-film transistors (TFTs);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.864383

Filename

1597526