Implicit Analytical Surface/Interface Potential Solutions for Modeling Strained-Si MOSFETs

Author

Chandrasekaran, Karthik ; Zhou, Xing ; Siau Ben Chiah ; See, Guan Huei ; Rustagi, Subhash C.

Author_Institution

Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore

Volume

53

Issue

12

fYear

2006

Firstpage

3110

Lastpage

3117

Abstract

A new technique for calculating surface and interface potentials in heterostructure MOSFETs such as strained-Si/SiGe using an internal iteration approach is presented. It is based on the unified regional approach with coupled iterative potential solutions at the surface and heterostructure interface, and it has been applied to modeling strained-Si/SiGe MOSFETs charge and capacitance in all bias regions, scalable for Ge mole fraction, strained-Si and SiGe layer thicknesses and doping. The formulations are shown for a buried-channel nMOSFET, and the approach to the solutions is generic to all heterostructures, which exhibit confinement of carriers at the different interfaces

Keywords

Ge-Si alloys; MOSFET; Poisson equation; interface phenomena; semiconductor doping; silicon; surface potential; Ge mole fraction; Poisson solution; Si-SiGe; compact model; heterostructure MOSFET; heterostructure interface; interface potential; modeling strain; strained silicon; surface interface; surface potential; Capacitance; Carrier confinement; Doping; Germanium silicon alloys; Iterative methods; MOSFET circuits; Poisson equations; Semiconductor device modeling; Semiconductor process modeling; Silicon germanium; Compact model; Poisson solution; SiGe; heterostructure MOSFET; strained silicon (s-Si); surface potential;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.885520

Filename

4016326