DocumentCode :
839062
Title :
5-W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly Diffraction-Limited Beam Quality
Author :
Hasler, K.-H. ; Sumpf, B. ; Adamiec, P. ; Bugge, F. ; Fricke, J. ; Ressel, P. ; Wenzel, H. ; Erbert, G. ; Tränkle, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztechnik, Berlin
Volume :
20
Issue :
19
fYear :
2008
Firstpage :
1648
Lastpage :
1650
Abstract :
Distributed Bragg reflector tapered lasers emitting at a wavelength of about 1060 nm were realized. The expitaxial layer structure leads to a vertical far-field angle of 15deg (full-width at half-maximum). The devices with a total length of 4 mm consist of 2-mm-long ridge waveguide and tapered sections. The input currents to both sections can be independently controlled. The laser reached 5-W output power with a narrow spectral linewidth below 40 pm (95% power) and a nearly diffraction-limited beam quality.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; quantum well lasers; semiconductor epitaxial layers; spectral line breadth; InGaAs; distributed Bragg reflector tapered lasers; expitaxial layer structure; narrow spectral linewidth; nearly diffraction-limited beam quality; power 5 W; size 2 mm; size 4 mm; wavelength 1060 nm; Distributed Bragg reflector (DBR) lasers; near infrared lasers; semiconductor lasers; tapered lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2008.2002744
Filename :
4602705
Link To Document :
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