Title :
15-nm base type-II InP/GaAsSb/InP DHBTs with FT=384 GHz and a 6-V BVCEO
Author :
Liu, H.G. ; Watkins, S.P. ; Bolognesi, C.R.
Author_Institution :
the Dept. of Physic, Simon Fraser Univ., Burnaby, BC, Canada
fDate :
3/1/2006 12:00:00 AM
Abstract :
Type-II InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) with a 15-nm base were fabricated by contact lithography: 0.73×11 μm2 emitter devices feature fT=384GHz (fMAX=262GHz) and BVCEO=6V. This is the highest fT ever reported for InP/GaAsSb DHBTs, and an "all-technology" record fT×BVCEO product of 2304 GHz·V. This result is credited to the favorable scaling of InP/GaAsSb/InP DHBT breakdown voltages (BVCEO) in thin collector structures.
Keywords :
III-V semiconductors; arsenic compounds; gallium arsenide; heterojunction bipolar transistors; indium compounds; lithography; semiconductor device breakdown; submillimetre wave transistors; 15 nm; 384 GHz; 6 V; InP-GaAsSb-InP; breakdown voltages; contact lithography; cutoff frequencies; double heterojunction bipolar transistors; thin collector structures; Cutoff frequency; Doping; Double heterojunction bipolar transistors; Electron mobility; Heterojunction bipolar transistors; Impact ionization; Indium phosphide; Lithography; Spontaneous emission; Voltage; Breakdown voltage (BV); GaAsSb; GaInAs; InP; cutoff frequencies; double heterojunction bipolar transistors (DHBTs); heterojunction bipolar transistors (HBTs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2005.863542
