Use of double-channel heterostructures to improve the access resistance and linearity in GaN-based HEMTs

Author

Palacios, Tomás ; Chini, Alessandro ; Buttari, Dario ; Heikman, Sten ; Chakraborty, Arpan ; Keller, Stacia ; DenBaars, Steven P. ; Mishra, Umesh K.

Author_Institution

Electr. & Comput. Eng. Dept., Univ. of California, Santa Barbara, CA, USA

Volume

53

Issue

3

fYear

2006

fDate

3/1/2006 12:00:00 AM

Firstpage

562

Lastpage

565

Abstract

Double-channel structures have been used in AlGaN/GaN high electron mobility transistors to reduce the access resistance. Carrier densities as high as 2.9×10¹³ cm^-2 and mobilities in the 1300 cm²/V·s range have been obtained in the access region. Also, the correct design of the potential barrier between the different channels allowed tailoring the differential access resistance to enhance the linearity of the transistors. This increase in linearity has been measured as a flatter profile of the transconductance and cutoff frequency versus current and as an improvement of more than 2 dB in large-signal two-tone linearity measurements.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; AlGaN-GaN; current gain; cutoff frequency; differential access resistance; double-channel heterostructures; high electron mobility transistors; high-frequency performance; linearity measurements; potential barrier; transconductance characteristic; two-tone linearity; Aluminum gallium nitride; Charge carrier density; Current measurement; Electrical resistance measurement; Frequency measurement; Gallium nitride; HEMTs; Linearity; MODFETs; Transconductance; Current gain cutoff frequency; gallium nitride (GaN); high-electron mobility transistor (HEMT); high-frequency performance; transconductance; two-tone linearity;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2005.863767

Filename

1597536