CMOS-Compatible SOI MESFETs With High Breakdown Voltage

Author

Balijepalli, A. ; Joshi, Pankaj ; Kushner, V. ; Jinman Yang ; Thornton, Trevor J. ; Thornton, Trevor J.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ

Volume

53

Issue

12

fYear

2006

Firstpage

3129

Lastpage

3135

Abstract

The authors demonstrate that silicon-on-insulator (SOI) MESFETs can be fabricated alongside SOI CMOS with no changes to the foundry process flow. The MESFETs operate in depletion mode with a threshold voltage of -0.6 V for a gate length of 0.6 mum. The breakdown voltage of the MESFETs greatly exceeds that of the CMOS devices and varies in the range of 12-58 V depending upon the channel access length, i.e., the distance from the edge of the gate to the edge of the drain region. For MESFETs with a gate length of 0.6 mum and an access length of 0.6 mum, the peak cutoff frequency exceeds 7 GHz. The maximum available gain increases with drain bias and values of f_max range from 17 GHz at V_DD = 2 V to 22 GHz at V_DD = 8 V

Keywords

CMOS integrated circuits; Schottky gate field effect transistors; semiconductor device breakdown; silicon-on-insulator; -0.6 V; 0.6 micron; 12 to 58 V; 17 GHz; 2 V; 22 GHz; 8 V; CMOS; MESFET; RF power gain; SOI; breakdown voltage; silicon on insulator; Breakdown voltage; MESFETs; RF power gain; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.885530

Filename

4016339