Title :
High-Temperature Operation of AlGaN/GaN HFET With a Low on-State Resistance, High Breakdown Voltage, and Fast Switching
Author :
Nomura, Takehiko ; Kambayashi, Hiroshi ; Masuda, Mitsuru ; Ishii, Sonomi ; Ikeda, Nariaki ; Lee, Jiang ; Yoshida, Seikoh
Author_Institution :
Yokohama R&D Labs., Furukawa Electr. Co. Ltd., Yokohama
Abstract :
Improved characteristics of an AlGaN/GaN HFET are reported. In this paper, the authors introduce a new ohmic electrode of Ti/AlSi/Mo and a low refractive index SiNx to decrease the contact resistance and gate leakage current. The AlGaN/GaN HFET showed a low specific resistance of 6.3 mOmega middot cm2 and a high breakdown voltage of 750 V. The switching characteristics of an AlGaN/GaN HFET are investigated. The small turn-on delay of 7.2 ns, which was one-tenth of Si MOSFETs, was measured. The switching operation of the HFET showed no significant degradation up to 225 degC
Keywords :
III-V semiconductors; aluminium compounds; contact resistance; elemental semiconductors; gallium compounds; high electron mobility transistors; high-temperature techniques; leakage currents; molybdenum; semiconductor device breakdown; silicon; silicon compounds; titanium; wide band gap semiconductors; 7.2 ns; 750 V; AlGaN-GaN; AlGaN/GaN HFET; Si MOSFET; SiN; Ti-AlSi-Mo; breakdown voltage; contact resistance; fast switching; gate leakage current; high-temperature operation; ohmic electrode; on-state resistance; refractive index; Aluminum gallium nitride; Contact resistance; Delay; Electrodes; Gallium nitride; HEMTs; Leakage current; MODFETs; Refractive index; Silicon compounds; Contact resistance; MODFETs; dynamic response; gallium nitride; passivation;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.885532
