Title :
Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes
Author :
Campbell, J.C. ; Johnson, B.C. ; Qua, G.J. ; Tsang, W.T.
Author_Institution :
AT&T Bell Lab., Holmdel, NJ, USA
fDate :
5/1/1989 12:00:00 AM
Abstract :
A theoretical model for the frequency response of InP/InGaAs avalanche photodiodes (APDs) is presented. Included in the analysis are resistive, capacitive, and inductive parasitics, transit-time factors, hole trapping at the heterojunction interfaces, and the avalanche buildup time. The contributions of the primary electrons, primary holes, and secondary electrons to the transit-time-limited response are considered separately. Using a measurement apparatus which consists of a frequency synthesizer and a spectrum analyzer controlled by a microcomputer, the frequency response of InP/InGaAsP/InGaAs APDs grown by chemical-beam epitaxy are measured. Good agreement with the calculated response has been obtained over a wide range of gains.<>
Keywords :
III-V semiconductors; avalanche photodiodes; frequency response; frequency synthesizers; gallium arsenide; indium compounds; spectral analysers; APDs; III-V semiconductors; InP-InGaAsP-InGaAs; avalanche buildup time; avalanche photodiodes; capacitive parasitics; chemical-beam epitaxy; frequency response; frequency synthesizer; gains; heterojunction interfaces; hole trapping; inductive parasitics; microcomputer; primary electrons; primary holes; resistive parasitics; secondary electrons; spectrum analyzer; transit-time factors; Avalanche photodiodes; Charge carrier processes; Electron traps; Frequency measurement; Frequency response; Frequency synthesizers; Heterojunctions; Indium gallium arsenide; Indium phosphide; Spectral analysis;
Journal_Title :
Lightwave Technology, Journal of
