Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes

Author

Campbell, J.C. ; Johnson, B.C. ; Qua, G.J. ; Tsang, W.T.

Author_Institution

AT&T Bell Lab., Holmdel, NJ, USA

Volume

7

Issue

5

fYear

1989

fDate

5/1/1989 12:00:00 AM

Firstpage

778

Lastpage

784

Abstract

A theoretical model for the frequency response of InP/InGaAs avalanche photodiodes (APDs) is presented. Included in the analysis are resistive, capacitive, and inductive parasitics, transit-time factors, hole trapping at the heterojunction interfaces, and the avalanche buildup time. The contributions of the primary electrons, primary holes, and secondary electrons to the transit-time-limited response are considered separately. Using a measurement apparatus which consists of a frequency synthesizer and a spectrum analyzer controlled by a microcomputer, the frequency response of InP/InGaAsP/InGaAs APDs grown by chemical-beam epitaxy are measured. Good agreement with the calculated response has been obtained over a wide range of gains.<>

Keywords

III-V semiconductors; avalanche photodiodes; frequency response; frequency synthesizers; gallium arsenide; indium compounds; spectral analysers; APDs; III-V semiconductors; InP-InGaAsP-InGaAs; avalanche buildup time; avalanche photodiodes; capacitive parasitics; chemical-beam epitaxy; frequency response; frequency synthesizer; gains; heterojunction interfaces; hole trapping; inductive parasitics; microcomputer; primary electrons; primary holes; resistive parasitics; secondary electrons; spectrum analyzer; transit-time factors; Avalanche photodiodes; Charge carrier processes; Electron traps; Frequency measurement; Frequency response; Frequency synthesizers; Heterojunctions; Indium gallium arsenide; Indium phosphide; Spectral analysis;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.19113

Filename

19113