Intrinsic Data Retention in Nanoscaled Phase-Change Memories—Part II: Statistical Analysis and Prediction of Failure Time

Author

Redaelli, Andrea ; Ielmini, Daniele ; Russo, Ugo ; Lacaita, Andrea L.

Author_Institution

Dipt. di Elettronica e Informazione, Politecnico di Milano

Volume

53

Issue

12

fYear

2006

Firstpage

3040

Lastpage

3046

Abstract

The statistical spread of intrinsic data retention times in phase-change memory (PCM) cells is studied. Based on the crystallization and percolation model described in part 1, the crystalline grain size in the amorphous volume after data loss is extracted. From the temperature dependence of grain size, the authors calculate the statistical shape factor for the distribution of failure times, allowing a statistical prediction of data retention in PCM large arrays. The scaling and optimization issues with respect to failure time statistical spread are finally addressed

Keywords

crystallisation; grain size; nanotechnology; percolation; phase change materials; random-access storage; statistical analysis; crystalline grain size; crystallization model; failure time prediction; intrinsic data retention; nanoscaled phase-change memories; percolation model; phase-change memory cells; statistical analysis; statistical prediction; statistical shape factor; Amorphous materials; Crystallization; Data mining; Grain size; Phase change materials; Phase change memory; Shape; Statistical analysis; Temperature dependence; Temperature distribution; Amorphous semiconductors; chalcogenide; crystal growth; nonvolatile memories; phase-change memory (PCM);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.885525

Filename

4016358