Planar Bulk MOSFETs Versus FinFETs: An Analog/RF Perspective

Author

Subramanian, Vaidy ; Parvais, Bertrand ; Borremans, Jonathan ; Mercha, Abdelkarim ; Linten, Dimitri ; Wambacq, Piet ; Loo, Josine ; Dehan, Morin ; Gustin, Cedric ; Collaert, Nadine ; Kubicek, Stefan ; Lander, Robert ; Hooker, Jacob ; Cubaynes, Florence ;

Volume

53

Issue

12

fYear

2006

Firstpage

3071

Lastpage

3079

Abstract

Comparison of digital and analog figures-of-merit of FinFETs and planar bulk MOSFETs reveals an interesting tradeoff in the analog/RF design space. It is found that FinFETs possess the following key advantages over bulk MOSFETs: reduced leakage, excellent subthreshold slope, and better voltage gain without degradation of noise or linearity. This makes them attractive for digital and low-frequency RF applications around 5 GHz, where the performance-power tradeoff is important. On the other hand, in high-frequency applications, planar bulk MOSFETs are seen to hold the advantage over FinFETs due to their higher peak transconductance. However, this comes at a cost of a reduced voltage gain of bulk MOSFETs

Keywords

MOSFET; analogue integrated circuits; radiofrequency integrated circuits; FinFET; analog/RF design; peak transconductance; planar bulk MOSFET; subthreshold slope; Costs; Degradation; FinFETs; Linearity; Low-frequency noise; MOSFET circuits; Noise reduction; Radio frequency; Transconductance; Voltage; Analog; FinFET; MOSFET; MuGFET; mixed signal; radio-frequency (RF); silicon-on-insulator (SOI) technology;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2006.885649

Filename

4016362