• DocumentCode
    839423
  • Title

    High-power (200 mW) singlemode operation of InGaAsN/GaAs ridge waveguide lasers with wavelength around 1.3 μm

  • Author

    Kovsh, A.R. ; Wang, J.S. ; Hsiao, R.S. ; Chen, L.P. ; Livshits, D.A. ; Lin, G. ; Ustinov, V.M. ; Chi, J.Y.

  • Author_Institution
    Ind. Technol. Res. Inst., Taiwan, Taiwan
  • Volume
    39
  • Issue
    24
  • fYear
    2003
  • Firstpage
    1726
  • Lastpage
    1728
  • Abstract
    High-power narrow ridge waveguide lasers emitting with a wavelength around 1.3 μm were realised with a single In0.36GaAsN0.022 quantum well with GaAs barriers. A narrow vertical far-field angle of 35° was obtained. Single lateral mode continuous-wave operation with slope efficiency of 0.57 W/A, series resistance of 2.6 Ω, and kink-free output power of 210 mW was achieved.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; quantum well lasers; waveguide lasers; 1.3 micron; 2.6 ohm; 200 mW; 210 mW; GaAs barriers; InGaAsN-GaAs; high-power singlemode lasers; kink-free output power; laser diodes; lateral mode continuous-wave operation; narrow ridge waveguide lasers; quantum well; slope efficiency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20031085
  • Filename
    1251542
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=839423