Title :
Linewidth of InP-based 1.55 μm VCSELs with buried tunnel junction
Author :
Shau, R. ; Halbritter, H. ; Riemenschneider, F. ; Ortsiefer, M. ; Rosskopf, J. ; Bohm, G. ; Maute, M. ; Meissner, P. ; Amann, M.-C.
Author_Institution :
Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany
Abstract :
Spectral linewidth measurements of 1.55 μm InGaAlAs/InP vertical-cavity surface-emitting lasers (VCSELs) employing a buried tunnel junction are reported. A narrow linewidth around 28 MHz was obtained at a power level of 0.5 mW using the self-heterodyne method, and an estimation for the linewidth enhancement factor is given.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser modes; quantum well lasers; spectral line breadth; surface emitting lasers; 0.5 mW; 1.55 micron; InGaAlAs-InP; Lorentzian lineshape; VCSEL; average wavelength tuning; buried tunnel junction; compressively strained quantum wells; linewidth enhancement factor; self-heterodyne method; sidemode suppression; single-mode lasers; spectral linewidth measurements; two-step epitaxial process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031143
