Title :
The Hole Role in Solid-State Imagers
Author :
Theuwissen, Albert J P
Author_Institution :
DALSA Semicond., Eindhoven
Abstract :
The importance of holes present in the pixels of solid-state image sensors is described by Theuwissen et al. (IEDM Tech. Dig. 2005, p. 817). Today´s success of digital imaging is based on the positive effect of an accumulation layer that reduces the interface-related dark current and dark current fixed-pattern noise. This superb imaging feature is applied in charge-coupled devices as well as in complementary metal-oxide-semiconductor devices, in consumer as well as in professional equipment. Holes are not only used to improve the dark performance of imagers; other examples of efficient use of holes are fixing electrostatic potentials, creating gate structures, draining photon-generated charges, and constructing antiblooming means
Keywords :
CCD image sensors; CMOS image sensors; photoconductivity; accumulation layer; charge-coupled devices; complementary metal-oxide-semiconductor devices; dark current fixed-pattern noise; digital imaging; interface-related dark current; solid-state image sensors; CMOS image sensors; Charge coupled devices; Clocks; Dark current; Electrostatics; Image sensors; Noise reduction; Optoelectronic and photonic sensors; Pixel; Solid state circuits; CMOS image sensors; Charge-coupled device (CCD) image sensors; pinned photodiodes (PPDs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2006.885545
