Title :
Selective photochemical dry etching of GaAs/AlGaAs and InGaAs/InAlAs heterostructures
Author :
Kosugi, M. ; Kuroda, Sho ; Harada, Nobohiro ; Katakami, T.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
Selective photochemical dry etching of GaAs layers on AlGaAs using HCl gas and InGaAs layers on InAlAs using CH3Br gas is studied. A low pressure mercury lamp was used as the deep UV light source. A selectivity of more than 150 for GaAs over AlGaAs and more than 60 for InGaAs over InAlAs was obtained.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; indium compounds; semiconductor junctions; semiconductor technology; CH 3Br gas; GaAs; GaAs-AlGaAs; HCl gas; InGaAs; InGaAs-InAlAs; deep UV light source; heterostructures; low pressure mercury lamp; photochemical dry etching; selective etching; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911309
