Title :
Solar-Blind 4H-SiC Single-Photon Avalanche Diode Operating in Geiger Mode
Author :
Vert, Alexey ; Soloviev, Stanislav ; Fronheiser, Jody ; Sandvik, Peter
Author_Institution :
Gen. Electr. Global Res. Center, Niskayuna, NY
Abstract :
A solar blind 4H-SiC single photon avalanche diode (SPAD) with a sharp cutoff at a wavelength of 280 nm is reported. The SPAD with separate absorption and multiplication layers was designed for operation in Geiger mode. A thin film optical filter deposited on a sapphire window of the device package provided sensitivity in the wavelength range between 240 and 280 nm with a very high solar photon rejection ratio. An estimated dark current of 0.4 pA (0.75 nA/cm2) at a gain of 1000 was measured on a device with an effective mesa diameter of 260 mum. A single photon detection efficiency of 9.4% and a dark count probability of 4 times 10-4 were demonstrated at a wavelength of 266 nm for the same device.
Keywords :
avalanche photodiodes; dark conductivity; photodetectors; silicon compounds; wide band gap semiconductors; 4H-SiC single photon avalanche diode; Geiger mode operation; SiC; dark current; effective mesa diameter; sapphire window; silicon carbide; single-photon detector; solar blind detector; solar photon rejection ratio; thin film optical filter; wavelength 240 nm to 280 nm; Absorption; Current measurement; Dark current; Diodes; Gain measurement; Optical films; Optical filters; Packaging; Sputtering; Thin film devices; Avalanche photodiodes (APDs); Geiger-mode detection; silicon carbide; single-photon detector; solar blind detector;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2008.928852