Title :
InP/InGaAs pin photodiode structure maximising bandwidth and efficiency
Author :
Muramoto, Y. ; Ishibashi, T.
Author_Institution :
NTT Photonics Labs., NTT Corp., Kanagawa, Japan
Abstract :
A new photodiode design that combines depleted and neutral absorption layers to minimise carrier travelling delay time for a given total absorption layer thickness is proposed. The fabricated photodiode has a thick (0.8 μm) InGaAs absorption layer and achieves a responsivity of 0.98 A/W at λ=1.55 μm while still maintaining a high bandwidth of 50 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; minority carriers; p-i-n photodiodes; 1.55 micron; 50 GHz; InP-InGaAs; carrier travelling delay time; charge-control model; depleted absorption layers; effective minority electron velocity; high bandwidth; neutral absorption layers; pin photodiode design; responsivity; total hole charge;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20031116
