High transconductance enhancement-mode AlGaN/GaN HEMTs on SiC substrate

Author

Kumar, V. ; Kuliev, A. ; Tanaka, T. ; Otoki, Y. ; Adesida, I.

Author_Institution

Micro & Nanotechnology Lab. & Dept. of Electr. & Comput. Eng., Univ. of Illinois, Urbana, IL, USA

Volume

39

Issue

24

fYear

2003

Firstpage

1758

Lastpage

1760

Abstract

Using inductively-coupled-plasma reactive ion etching (ICP-RIE), recessed 1 μm gate-length enhancement-mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) were fabricated. These 1 μm gate-length devices exhibited maximum drain current density of 470 mA/mm, extrinsic transconductance of 248 mS/mm and threshold voltage of 75 mV. These characteristics are much higher than previously reported values for GaN-based E-mode HEMTs. A unity gain cutoff frequency (f_T) of 8 GHz and a maximum frequency of oscillation (f_max) of 26 GHz were also measured on these devices.

Keywords

III-V semiconductors; aluminium compounds; electric admittance; gallium compounds; high electron mobility transistors; microwave field effect transistors; sputter etching; wide band gap semiconductors; 26 GHz; 8 GHz; AlGaN-GaN; DC transfer characteristics; E-mode devices; MOCVD; enhancement-mode HEMT; gate-recessing; high transconductance HEMT; inductively-coupled-plasma reactive ion etching; maximum drain current density; maximum oscillation frequency; ohmic contact resistance; unity gain cutoff frequency;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20031124

Filename

1251563