Author :
Chi, S.S. ; Kim, H.T. ; Kim, M.S. ; Kim, T.E. ; Shin, H.T. ; Park, H.S. ; Kim, K.H. ; Kim, K.S. ; Nam, I.C. ; Kim, D.J. ; Min, K.S. ; Kang, D.W. ; Kim, D.M.
Abstract :
A new sub-bandgap photonic gated-diode method is proposed to extract the energy-dependent and spatial distributions of traps at the SiO2/Si interface in MOSFETs. For the photonic current-voltage (I-V) characterisation of MOSFETs, an optical source with a sub-bandgap photon energy less than the silicon bandgap (Eph=0.95 eVg=1.12 eV) is employed for the characterisation of interface states (Dit) distributed in the photo-responsive energy band (EC-0.95≤Eit≤EC) in MOS systems with a polysilicon gate.
Keywords :
MOSFET; interface states; photonic band gap; semiconductor device measurement; 0.95 eV; 1.12 eV; MOSFET; SiO2-Si; energy-dependent trap distribution; gate dielectrics; interface states distribution extraction; photo-responsive energy band; photonic current-voltage characterisation; polysilicon gate; silicon bandgap; sub-bandgap photon energy optical source; sub-bandgap photonic excitation; sub-bandgap photonic gated-diode method; trap density; trap spatial distribution;
