Title :
Low threshold operation of 1.55 μm GaInAsP/InP DFB-BH LDs entirely grown by MOVPE on InP gratings
Author :
Yamada, Hiroyoshi ; Sasaki, T. ; Takano, Shigeru ; Numai, Takahiro ; Kitamura, Masayuki ; Mito, I.
Author_Institution :
Optoelectron. Res. Lab., NEC Corp., Kawasaki
fDate :
2/4/1988 12:00:00 AM
Abstract :
1.55 μm GaInAsP/InP DFB-BH LDs on corrugated InP substrates were fabricated by only two-stage MOVPE including burying layer growth. The 9 mA minimum threshold current was achieved with both facets cleaved, which the authors believe is the lowest among MOVPE grown DFB LDs with InP grating. Up to 20 mW maximum output power and 0.21 W/A differential quantum efficiency were also attained under single longitudinal mode operation
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1.55 micron; 9 mA; DFB-BH LDs; GaInAsP-InP; InP gratings; burying layer growth; differential quantum efficiency; facets; maximum output power; minimum threshold current; single longitudinal mode operation; two-stage MOVPE;
Journal_Title :
Electronics Letters
