Title :
Two-wavelength disordered quantum-well photodetector
Author :
Johnson, B.C. ; Campbell, J.C. ; Dupuis, R.D. ; Tell, B.
Author_Institution :
AT&T Bell Labs., Holmdel, NJ, USA
fDate :
2/4/1988 12:00:00 AM
Abstract :
A GaAs-AlGaAs waveguide photodetector combining disordered and as-grown quantum well photodiodes is described. The disordered section serves both as a short wavelength photodiode and as a passive waveguide to transmit longer wavelengths to the as-grown section. Optical absorption and photocurrent spectra demonstrate the absorption edge shift due to disordering and the two wavelength-band selectivity of the device
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; optical waveguide components; photodetectors; photodiodes; GaAs-AlGaAs waveguide photodetector; III-V semiconductors; absorption edge shift; as-grown section; disordered quantum-well photodetector; passive waveguide; photocurrent spectra; short wavelength photodiode; two wavelength-band selectivity;
Journal_Title :
Electronics Letters
