• DocumentCode
    840334
  • Title

    Diffusion-induced disordering of Ga0.47In0.53As/InP multiple quantum wells with zinc

  • Author

    David, J.P.R. ; Claxton, P.A. ; Robson, P.N. ; Sykes, Daniel

  • Volume
    24
  • Issue
    15
  • fYear
    1988
  • fDate
    7/21/1988 12:00:00 AM
  • Firstpage
    910
  • Lastpage
    911
  • Abstract
    Diffusing zinc into Ga0.47In0.53As/InP MQW layers is found to cause strong intermixing of the group III elements, which changes the composition in the quantum wells and barriers. As a result of this disordering the MQW bandgap is reduced in energy and the photoluminescence emission peak moves to longer wavelength
  • Keywords
    III-V semiconductors; diffusion in solids; energy gap; gallium arsenide; indium compounds; optoelectronic devices; semiconductor superlattices; semiconductor technology; zinc; Ga0.47In0.53As-InP; MQW bandgap reduction; Zn; group III elements intermixing; longer wavelength; photoluminescence emission peak; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191628
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840334