Title :
Diffusion-induced disordering of Ga0.47In0.53As/InP multiple quantum wells with zinc
Author :
David, J.P.R. ; Claxton, P.A. ; Robson, P.N. ; Sykes, Daniel
fDate :
7/21/1988 12:00:00 AM
Abstract :
Diffusing zinc into Ga0.47In0.53As/InP MQW layers is found to cause strong intermixing of the group III elements, which changes the composition in the quantum wells and barriers. As a result of this disordering the MQW bandgap is reduced in energy and the photoluminescence emission peak moves to longer wavelength
Keywords :
III-V semiconductors; diffusion in solids; energy gap; gallium arsenide; indium compounds; optoelectronic devices; semiconductor superlattices; semiconductor technology; zinc; Ga0.47In0.53As-InP; MQW bandgap reduction; Zn; group III elements intermixing; longer wavelength; photoluminescence emission peak; semiconductors;
Journal_Title :
Electronics Letters
