Title :
DC-92 GHz ultra-broadband high gain InP HEMT amplifier with 410 GHz gain-bandwidth product
Author :
Meliani, Chafik ; Post, G. ; Rondeau, G. ; Decobert, Jean ; Mouzannar, W. ; Dutisseuil, E. ; Lefevre, R.
Author_Institution :
OPTO, Alcatel R&I, Marcoussis
fDate :
9/26/2002 12:00:00 AM
Abstract :
A coplanar distributed amplifier, fabricated in a double channel InP HEMT technology, is presented. It exhibits a 13 dB gain and a 92 GHz -3 dB cutoff frequency that corresponds to a gain-bandwidth product of 410 GHz. Key aspects for distributed and coplanar design around 100 GHz are highlighted
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; distributed amplifiers; field effect MIMIC; indium compounds; millimetre wave amplifiers; wideband amplifiers; 0 to 92 GHz; 100 GHz; 13 dB; HEMT amplifier; InP; coplanar distributed amplifier; cutoff frequency; distributed design; double channel HEMT; gain-bandwidth product; ultra-broadband high gain amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020846
