Title :
10.7 GHz frequency divider using double layer silicon bipolar process technology
Author :
Wilson, M.C. ; Hunt, P.C. ; Duncan, S. ; Bazley, D.J.
Author_Institution :
Plessey Res. Ltd., Towcester
fDate :
7/21/1988 12:00:00 AM
Abstract :
A high-speed bipolar process is described which offers high performance, low capacitances and high packing densities. The performance of the process is demonstrated by a 1/8 frequency divider operating at a room temperature frequency of 10.7 GHz. This is considered to be the fastest for any silicon bipolar circuit
Keywords :
bipolar integrated circuits; counting circuits; digital integrated circuits; elemental semiconductors; frequency dividers; integrated circuit technology; semiconductor technology; silicon; 10.7 GHz; Si bipolar circuit; bipolar process; divide by 8; frequency divider; high packing densities; high performance; low capacitances; room temperature;
Journal_Title :
Electronics Letters
