DocumentCode
840461
Title
Towards high performance GaInAsN/GaAsN laser diodes in 1.5 μm range
Author
Gollub, D. ; Fischer, M. ; Forchel, A.
Author_Institution
Nanoplus Nanosystems & Technol. GmbH1, Gerbrunn, Germany
Volume
38
Issue
20
fYear
2002
fDate
9/26/2002 12:00:00 AM
Firstpage
1183
Lastpage
1184
Abstract
GaInAsN/GaAsN/AlGaAs double quantum well lasers with emission at 1.49 μm grown by solid source molecular beam epitaxy is investigated. The devices show the lowest threshold currents (120 mA) and highest output powers (130 mW pulsed) reported to date for GaAs-based 1.5 μm lasers
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; molecular beam epitaxial growth; optical transmitters; quantum well lasers; semiconductor epitaxial layers; semiconductor growth; 1.5 micron; 120 mA; 130 mW; GaInAsN-GaAsN-AlGaAs; GaInAsN/GaAsN/AlGaAs; double quantum well lasers; laser diodes; output powers; solid source molecular beam epitaxy; threshold currents;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20020812
Filename
1040986
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