DocumentCode
840580
Title
Gate current and 2D electron concentration in HIGFET and SISFET
Author
Depreeuw, D. ; Godts, P. ; Constant, Eric ; Zimmerman, Jeramy ; Danneville, Frangois
Author_Institution
Univ. des Sci. et Tech. de Lille Flandres-Artois, Villeneuve d´Ascq
Volume
24
Issue
15
fYear
1988
fDate
7/21/1988 12:00:00 AM
Firstpage
944
Lastpage
945
Abstract
A very simple analytical relation, without any fitting parameters, between the gate current in a HIGFET or SISFET and the 2D electron concentration giving rise to the drain current is proposed. The theoretical background which allows one to obtain this relation is first presented. Then good agreement is shown with experimental results obtained with an AlGaAs/GaAs HIGFET. Lastly, characteristics of structures which should yield high values of 2D electron concentration without too high a value of gate current are discussed
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; semiconductor device models; 2D electron concentration; AlGaAs-GaAs; HEMT; HIGFET; SISFET; analytical relation; characteristics; experimental results; gate current; model; semiconductors;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
Filename
191652
Link To Document