Title :
CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodes
Author :
Thomas, S.G. ; Csutak, S. ; Jones, R.E. ; Bharatan, S. ; Jasper, C. ; Thomas, R. ; Zirkle, T. ; Campbell, J.C.
Author_Institution :
Si RF/IF Technol., Motorola, Tempe, AZ, USA
fDate :
9/26/2002 12:00:00 AM
Abstract :
Planar, interdigitated p-i-n photodiodes with varying implanted electrode depths have been fabricated on 2 μm-thick silicon-on-insulator substrates using a conventional CMOS platform technology. The bandwidth at 850 nm wavelength was found to achieve an optimum of 4 GHz with an electrode depth of 1 μm
Keywords :
electrodes; integrated optoelectronics; ion implantation; optical receivers; p-i-n photodiodes; photodetectors; silicon-on-insulator; 1 micron; 2 micron; 4 GHz; 850 nm; CMOS platform technology; CMOS-compatible photodetector; Si; deep implanted electrodes; interdigitated PIN photodiodes; planar photodiodes; thick SOI;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020832
