• DocumentCode
    840615
  • Title

    CMOS-compatible photodetector fabricated on thick SOI having deep implanted electrodes

  • Author

    Thomas, S.G. ; Csutak, S. ; Jones, R.E. ; Bharatan, S. ; Jasper, C. ; Thomas, R. ; Zirkle, T. ; Campbell, J.C.

  • Author_Institution
    Si RF/IF Technol., Motorola, Tempe, AZ, USA
  • Volume
    38
  • Issue
    20
  • fYear
    2002
  • fDate
    9/26/2002 12:00:00 AM
  • Firstpage
    1202
  • Lastpage
    1204
  • Abstract
    Planar, interdigitated p-i-n photodiodes with varying implanted electrode depths have been fabricated on 2 μm-thick silicon-on-insulator substrates using a conventional CMOS platform technology. The bandwidth at 850 nm wavelength was found to achieve an optimum of 4 GHz with an electrode depth of 1 μm
  • Keywords
    electrodes; integrated optoelectronics; ion implantation; optical receivers; p-i-n photodiodes; photodetectors; silicon-on-insulator; 1 micron; 2 micron; 4 GHz; 850 nm; CMOS platform technology; CMOS-compatible photodetector; Si; deep implanted electrodes; interdigitated PIN photodiodes; planar photodiodes; thick SOI;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020832
  • Filename
    1040999
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840615