Formation of submicron PMOS transistors by implantation into silicide

PMOS transistors with channel lengths down to 0.35 μm have been fabricated by implanting boron into TiSi₂, and using a low temperature anneal to outdiffuse the dopant and form the p⁺ junction. This allows the formation of shallow, low resistance junctions (⩽0.26 μm, 5 Ω/□) and retains any ion damage within the silicide. Electrical measurements show reverse leakage currents of ~1 nA/cm² and PMOS characteristics comparable to or better than conventionally formed PMOS transistors