Metal Carbides for Band-Edge Work Function Metal Gate CMOS Devices

Author

Hwang, Wan Sik ; Chan, Daniel S H ; Cho, Byung Jin

Author_Institution

Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore, Singapore

Volume

55

Issue

9

fYear

2008

Firstpage

2469

Lastpage

2474

Abstract

Various metal carbides (TaC, HfC, WC, and VC) were thoroughly investigated for metal gate CMOS devices with band-edge work functions (WFs). It is found that TaC and HfC are more suitable for the CMOS device application among the various metal carbides. HfC is demonstrated to be a good candidate for NMOS because of its low WF and excellent thermal stability, while TaC Al shows a high WF and good thermal stability suitable for PMOS device application. In addition, HfC and TaC have a wide range of WF tunability using thin LaN and AlN interlayer or introduction of La and Al into the metal carbides.

Keywords

CMOS integrated circuits; III-V semiconductors; MOSFET; aluminium compounds; circuit tuning; hafnium compounds; high-k dielectric thin films; lanthanum compounds; tantalum compounds; thermal stability; tungsten compounds; vanadium compounds; work function; AlN; HfC; LaN; MOS capacitor; NMOS device application; PMOS device application; TaC; VC; WC; band-edge work function metal gate CMOS devices; equivalent oxide thickness; high-k dielectric materials; metal carbides; metal gate electrode; thermal stability; thin interlayer; work function tunability; Conductivity; Dielectric devices; Electrodes; Hybrid fiber coaxial cables; Inorganic materials; MOS devices; Optical wavelength conversion; Thermal stability; Virtual colonoscopy; Voltage; CMOS devices; HfC; MOS capacitor; TaC; equivalent oxide thickness (EOT); flatband voltage; high-$kappa$ dielectric; metal carbide; metal gate; work function (WF);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.927946

Filename

4603168