Title :
High-speed and low-driving-voltage InGaAs/InAlAs multiquantum well optical modulators
Author :
Kotaka, I. ; Wakita, Ken ; Kawano, Katsumi ; Asai, Masami ; Naganuma, M.
Author_Institution :
NTT Opto-Electron. Labs., Kanagawa, Japan
Abstract :
A study is made of high-speed, large-signal intensity modulation (in the frequency bandwidth of 16 GHz) with a low driving voltage of 2.0 V and a 20 dB extinction ratio. The modulator successfully operates at a long wavelength of 1.55 mu m with a low insertion loss of 6 dB. The 100 mu m long device with 16 GHz bandwidth and 1.5 V 10 dB on/off ratio voltage results in a bandwidth to voltage ratio of 11 GHz/V, which is the highest yet reported for an external intensity modulator.
Keywords :
III-V semiconductors; aluminium compounds; electro-optical devices; gallium arsenide; indium compounds; optical modulation; optoelectronic devices; semiconductor quantum wells; 1.55 micron; 100 micron; 16 GHz; 2 V; 20 dB; 6 dB; InGaAs-InAlAs; MQW; external intensity modulator; extinction ratio; frequency bandwidth; insertion loss; large-signal intensity modulation; long wavelength; low-driving-voltage; multiquantum well optical modulators; polarised light; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911338
