• DocumentCode
    840679
  • Title

    Diffraction-coupled, phase-locked arrays of antiguided, quantum-well lasers grown by metalorganic chemical vapour deposition

  • Author

    Mawst, L.J. ; Botez, D. ; Roth, T.J. ; Peterson, Garrett ; Yang, Jie J.

  • Author_Institution
    TRW Space & Technol. Group, Redondo Beach, CA
  • Volume
    24
  • Issue
    15
  • fYear
    1988
  • fDate
    7/21/1988 12:00:00 AM
  • Firstpage
    958
  • Lastpage
    959
  • Abstract
    A novel antiguided phase-locked array structure grown by metalorganic chemical vapour deposition is demonstrated. A 50 μm-long diffraction-coupling region is effective in selecting and maintaining diffraction limited fundamental-array-mode oscillation to 100 mW/uncoated facet
  • Keywords
    III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; integrated optics; laser mode locking; optical waveguides; semiconductor junction lasers; vapour phase epitaxial growth; GaAs-AlGaAs; MOCVD; antiguided structure; diffraction-coupling region; epitaxial growth; fundamental-array-mode oscillation; metalorganic chemical vapour deposition; phase-locked arrays; quantum-well lasers; semiconductor lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • Filename
    191661
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=840679