Second Harmonic Generation for Noninvasive Metrology of Silicon-on-Insulator Wafers

Author

Alles, Michael L. ; Pasternak, Robert ; Lu, Xiong ; Tolk, Norman H. ; Schrimpf, Ronald D. ; Fleetwood, Daniel M. ; Dolan, Robert P. ; Standley, Robert W.

Author_Institution

Vanderbilt Univ., Nashville, TN

Volume

20

Issue

2

fYear

2007

fDate

5/1/2007 12:00:00 AM

Firstpage

107

Lastpage

113

Abstract

We report experimental results from noninvasive second harmonic generation (SHG) measurements applied to characterize separation by implantation of oxygen (SIMOX) and bonded thin film silicon-on-insulator (SOI) wafers. Results demonstrate that the SHG response of the SOI structure can provide an indication of the quality of the buried oxide interfaces, including roughness, charge states, and detection of the presence of metallic contamination. The potential application of SHG as a noncontact metrology tool for process control is described

Keywords

SIMOX; buried layers; contamination; harmonic generation; ion implantation; nondestructive testing; thin films; SIMOX; SOI wafers; buried oxide interfaces; charge states; metallic contamination; noncontact metrology tool; noninvasive metrology; noninvasive second harmonic generation measurements; process control; separation by implantation of oxygen; silicon-on-insulator wafers; thin film; Atomic measurements; Current measurement; Electric variables measurement; Extraterrestrial measurements; Frequency conversion; Metrology; Optical harmonic generation; Pollution measurement; Semiconductor materials; Silicon on insulator technology; Contamination; interface; metrology; nondestructive; roughness;

fLanguage

English

Journal_Title

Semiconductor Manufacturing, IEEE Transactions on

Publisher

ieee

ISSN

0894-6507

Type

jour

DOI

10.1109/TSM.2007.896642

Filename

4182419