Title :
Analytical analysis of short-channel effects in MOSFETs for sub-100 nm technology
Author :
Park, Ji-Sun ; Lee, Seung-Yeon ; Shin, Hyungsoon ; Dutton, R.W.
Author_Institution :
Dept. of Inf. Electron. Eng., Ehwa Women´´s Univ., Seoul, South Korea
fDate :
9/26/2002 12:00:00 AM
Abstract :
Using a scaling length (λ) analysis, the short-channel effects of bulk MOSFETs with super-steep retrograded channels (SSR), fully-depleted SOI, and double-gate structures are investigated. It is found that the minimum channel length should be greater than 5λ and the depletion thickness of the SSR should be less than 30 nm in order to be applicable to 70 nm CMOS technology
Keywords :
CMOS integrated circuits; MOSFET; nanotechnology; silicon-on-insulator; 30 nm; 70 to 100 nm; CMOS technology; Si; bulk MOSFETs; depletion thickness; double-gate structures; fully-depleted SOI; minimum channel length; scaling length analysis; short-channel effects; sub-100 nm technology; super-steep retrograded channels;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020797
