Title :
MESFET large-signal model based on small-signal measurements for time-domain CAD
Author :
Ouslimani, A. ; Vernet, G. ; Henaux, J.C. ; Crozat, P. ; Adde, R.
Author_Institution :
Univ. de Paris-Sud, Orsay
fDate :
7/21/1988 12:00:00 AM
Abstract :
A large-signal model using a full transistor characterisation is developed for time-domain CAD of circuits. It uses 2-D look-up tables to describe the FETs nonlinear parameters which are a function of two internal voltages. It is validated in an experimental study of the step response of an NEC3SK MESFET
Keywords :
Schottky gate field effect transistors; circuit CAD; equivalent circuits; semiconductor device models; table lookup; time-domain synthesis; 2D lookup tables; MESFET; NEC3SK; computer aided design; full transistor characterisation; large-signal model; nonlinear parameters; small-signal measurements; step response; time-domain CAD;
Journal_Title :
Electronics Letters
