Title :
Performance Comparison of Graphene Nanoribbon FETs With Schottky Contacts and Doped Reservoirs
Author :
Yoon, Youngki ; Fiori, Gianluca ; Hong, Seokmin ; Iannaccone, Giuseppe ; Guo, Jing
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Florida, Gainesville, FL
Abstract :
We present an atomistic 3-D simulation study of the performance of graphene-nanoribbon (GNR) Schottky-barrier field-effect transistors (SBFETs) and transistors with doped reservoirs (MOSFETs) by means of the self-consistent solution of the Poisson and Schrodinger equations within the nonequilibrium Green´s function (NEGF) formalism. Ideal MOSFETs show slightly better electrical performance for both digital and terahertz applications. The impact of nonidealities on device performance has been investigated, taking into account the presence of single vacancy, edge roughness, and ionized impurities along the channel. In general, MOSFETs show more robust characteristics than SBFETs. Edge roughness and single-vacancy defect largely affect the performance of both device types.
Keywords :
Green´s function methods; MOSFET; Poisson equation; SCF calculations; Schottky barriers; Schrodinger equation; impurities; surface roughness; vacancies (crystal); MOSFETs; Poisson equation; Schottky contacts; Schrodinger equation; atomistic 3-D simulation; doped reservoirs; edge roughness; electrical performance; graphene-nanoribbon Schottky-barrier field-effect transistors; ionized impurity; nonequilibrium Green´s function formalism; self-consistent solution; single-vacancy defect; Contracts; FETs; Impurities; MOSFETs; Poisson equations; Reservoirs; Schottky barriers; Schottky gate field effect transistors; Schrodinger equation; Sheet materials; Defect; device simulation; graphene fieldeffect transistor; graphene nanoribbon; impurity; nonequilibrium Green´s function (NEGF); quantum transport;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2008.928021
