DocumentCode :
840820
Title :
Ohmic contacts to Al-rich n-AlGaN
Author :
Readinger, E.D. ; Mohney, S.E. ; Pribicko, T.G. ; Wang, J.H. ; Schweitz, K.O. ; Chowdhury, U. ; Wong, M.M. ; Dupuis, R.D. ; Pophristic, M. ; Guo, S.P.
Author_Institution :
Dept. of Mater. Sci. & Eng., Pennsylvania State Univ., University Park, PA, USA
Volume :
38
Issue :
20
fYear :
2002
fDate :
9/26/2002 12:00:00 AM
Firstpage :
1230
Lastpage :
1231
Abstract :
Ti/Al/Pt/Au and V/Al/Pt/Au ohmic contacts were studied on n-Al0.44Ga0.56N and n-Al0.6Ga0.4 N. Optimised V/Al/Pt/Au contacts provided lower resistance than did Ti/Al/Pt/Au contacts, which are commonly used on less Al-rich n-AlGaN. Specific contact resistances of 1 × 10-5 Ω·cm2 and 4 × 10-5 were achieved on n-Al0.44Ga0.56N and n-Al0.6Ga0.4N, respectively
Keywords :
III-V semiconductors; aluminium; aluminium compounds; contact resistance; gallium compounds; gold; ohmic contacts; platinum; titanium; vanadium; wide band gap semiconductors; III V semiconductors; Ti-Al-Pt-Au-AlGaN; Ti/Al/Pt/Au/AlGaN; V-Al-Pt-Au-AlGaN; V/Al/Pt/Au/AlGaN; contact resistances; ohmic contacts; wide band gap semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020800
Filename :
1041017
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=840820
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