DocumentCode
840823
Title
New Gate CD Control Technology Using CF 4 Plasma Treatment Following HBr/O 2 Plasma Treatment Step in Gate Etch Process Using Organic BARC
Author
Kang, Seong Jun ; Joung, Yang Hee ; Mun, Seong Yeol
Author_Institution
Dept. of Semicond. Mater. & Devices, Chonnam Nat. Univ., Cheonnam
Volume
20
Issue
2
fYear
2007
fDate
5/1/2007 12:00:00 AM
Firstpage
150
Lastpage
153
Abstract
A new technology of resist trimming in a gate etch process using organic bottom antireflective coating (BARC) for accurate and stable gate critical dimension (CD) control of sub-0.18-mum node technology is presented in this paper. The new method uses an in situ CF4 plasma treatment following an HBr/O2 plasma treatment step as a part of the gate etch process to achieve a stable gate CD. The new method controls gate CD by trimming the photo resist masking gate line by reducing the effect of etch by-products, the source of CD variation, after etching organic BARC with HBr/O2 plasma. It shows the markedly improved gate CD capability over the conventional one using just an HBr/O2 plasma treatment for the CD control. We confirm that this new method is very useful and effective for the accurate gate CD control for sub-0.18-mum node metal-oxide semiconductor technology
Keywords
antireflection coatings; etching; photoresists; sputter etching; 0.18 micron; gate CD control technology; gate critical dimension control; gate etch process; improved gate CD capability; metal-oxide semiconductor technology; organic BARC; organic bottom antireflective coating; photoresist masking; plasma treatment; resist trimming; Etching; Isolation technology; Lithography; Oxidation; Plasma applications; Plasma devices; Plasma materials processing; Plasma sources; Plasma stability; Resists; CF$_{4}$
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2007.895206
Filename
4182427
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