Title :
70 GHz integrated silicon oscillator
Author :
Buechler, J. ; Kasper, Erich ; Luy, J.F. ; Russer, Peter ; Strohm, K.M.
Author_Institution :
Tech. Univ. Munchen
fDate :
7/21/1988 12:00:00 AM
Abstract :
Planar oscillators on highly insulating Si substrate with a disc resonator were fabricated. The active element was an IMPATT diode made from Si MBE material. A maximum CW output power of 200 mW with an efficiency of 4.5% at 73 GHz has been obtained
Keywords :
IMPATT diodes; microwave integrated circuits; microwave oscillators; 200 mW; 4.5 percent; 70 to 73 GHz; EHF; IMPATT diode; MIC; MM-wave IC; Si; Si MBE material; disc resonator; highly insulating Si substrate; maximum CW output power; millimetre wave circuits; planar microwave oscillator;
Journal_Title :
Electronics Letters
